Semiconductor device

Details Semiconductor device Semiconductor device

1998-09-23

2000-05-09

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, H01L 2978

Patent

active

060607475

ABSTRACT:
A semiconductor device is characterized in that source electrode contact regions, each of which is formed of a first conductivity type source layer and a second conductivity type base layer in a surface of a semiconductor surface, are formed at respective intersectional points of a diagonally-arranged lattice, and in that a trench having a gate electrode buried therein is formed so as to snake through the contact regions alternately. By virtue of the structure, the trench arrangement and source/base simultaneous contact quality are improved, to thereby increase a trench density (channel density) per unit area.

REFERENCES:
patent: 4438448 (1984-03-01), Harrington et al.
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5410170 (1995-04-01), Bulucea et al.
patent: 5864159 (1999-01-01), Takahashi
patent: 5872377 (1999-02-01), Jeon

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