Semiconductor device

Details Semiconductor device Semiconductor device

2009-06-17

2011-12-20

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29165, C257SE29273, C257SE21209, C257SE21437, C257SE21664

Reexamination Certificate

active

08080845

ABSTRACT:
A semiconductor device includes a gate insulating film formed over a semiconductor substrate, a gate electrode formed over the gate insulating film, a source region formed in the semiconductor substrate, a first drain region formed on the other side of the gate electrode and formed in the semiconductor substrate, the first drain region having one end extending below the gate electrode, the first drain region having a first impurity concentration, a second drain region formed in the first drain region and spaced apart from the gate electrode by a first distance, the second drain region having a second impurity concentration higher than the first impurity concentration, a third drain region formed in the first drain region and spaced apart from the gate electrode by a second distance, the second distance being greater than the first distance, the third drain region having a third impurity concentration.

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