Semiconductor device

Details Semiconductor device Semiconductor device

2009-09-15

2011-12-27

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S622000, C257SE21218, C257SE21227, C257SE21231, C257SE21245, C257SE21229, C257SE21267, C257SE21548

Reexamination Certificate

active

08084832

ABSTRACT:
Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.

REFERENCES:
patent: 6221061 (2001-04-01), Engelson et al.
patent: 6448176 (2002-09-01), Grill et al.
patent: 6767825 (2004-07-01), Wu
patent: 7129159 (2006-10-01), America et al.
patent: 7135406 (2006-11-01), Lin et al.
patent: 7608545 (2009-10-01), Yun

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