Semiconductor device

Details Semiconductor device Semiconductor device

2008-07-08

2011-11-08

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE29118

Reexamination Certificate

active

08053830

ABSTRACT:
A semiconductor device including a semiconductor section including a semiconductor element and a recess formed in one of main surfaces and a metallic member at least a part of which is embedded in the recess. A void is formed in a region of the metallic member corresponding to the recess.

REFERENCES:
patent: 5438212 (1995-08-01), Okaniwa
patent: 2007/0176207 (2007-08-01), Kurokawa et al.
patent: 1-183166 (1989-07-01), None
patent: 6-310547 (1994-04-01), None
patent: 10-321877 (1998-12-01), None
patent: 11-163205 (1999-06-01), None
patent: 2000-40825 (2000-02-01), None
patent: 2001-44219 (2001-02-01), None
patent: 3791459 (2006-04-01), None
Office Action issued on Aug. 16. 2011 in the counterpart Japanese Patent Application Serial No. 2007-249526 (with English Translation).

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