Semiconductor device

Details Semiconductor device Semiconductor device

2008-02-13

2011-12-13

Andujar, Leonardo (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

C257S168000, C257S170000, C257S487000

Reexamination Certificate

active

08076749

ABSTRACT:
A semiconductor device includes: a first insulating layer; a semiconductor layer provided on the first insulating layer; a first semiconductor region selectively provided in the semiconductor layer; a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region; a first main electrode provided in contact with the first semiconductor region; a second main electrode provided in contact with the second semiconductor region; a second insulating layer provided on the semiconductor layer; a first conductive material provided in the second insulating layer above a portion of the semiconductor layer located between the first semiconductor region and the second semiconductor region; and a second conductive material provided in a trench provided in a portion of the semiconductor layer opposed to the first conductive material, being in contact with the first conductive material, and reaching the first insulating layer.

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