Semiconductor device

Details Semiconductor device Semiconductor device

2009-06-25

2011-12-13

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000, C257SE21635, C257SE21637, C438S199000, C438S592000, C438S585000

Reexamination Certificate

active

08076732

ABSTRACT:
A semiconductor device includes pMISFET and nMIS formed on the semiconductor substrate. The pMISFET includes, on the semiconductor substrate, first source/drain regions, a first gate dielectric formed therebetween, first lower and upper metal layers stacked on the first gate dielectric, a first upper metal layer containing at least one metallic element belonging to groups IIA and IIIA. The nMISFET includes, on the semiconductor substrate, second source/drain regions, second gate dielectric formed therebetween, a second lower and upper metal layers stacked on the second gate dielectric and the second upper metal layer substantially having the same composition as the first upper metal layer. The first lower metal layer is thicker than the second lower metal layer, and the atomic density of the metallic element contained in the first gate dielectric is lower than the atomic density of the metallic element contained in the second gate dielectric.

REFERENCES:
patent: 2005/0285208 (2005-12-01), Ren et al.
patent: 2007/0052037 (2007-03-01), Luan
patent: 2007/0057335 (2007-03-01), Tsuchiya et al.
patent: 2009/0014809 (2009-01-01), Sekine et al.
patent: 2010/0308418 (2010-12-01), Stahrenberg et al.
U.S. Appl. No. 12/233,055, filed Sep. 18, 2008, Reika Ichihara, et al.
C. Ren, et al., “Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process”, IEEE Electron Device Letters, vol. 27, No. 10, Oct. 2006, pp. 811-813.
H.Y. Yu, et al., “Low VtNi-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases”, 2007 Symposium on VLSI Technology Digest of Technical Papers, pp. 18-19.

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