Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-25
2011-11-01
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S330000, C257SE21537, C257SE21383, C438S212000, C438S268000
Reexamination Certificate
active
08049270
ABSTRACT:
This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second conductivity type formed on a surface of the epitaxial layer. A diffusion layer of a first conductivity type is selectively formed in the base layer, and a trench penetrates the base layer to reach the epitaxial layer. A gate electrode is formed in the trench through the gate insulator film formed on the inner wall of the trench. A first buried diffusion layer of a second conductivity type is formed in the epitaxial layer deeper than the bottom of the gate electrode. A second buried diffusion layer connects the first buried diffusion layer and the base layer and has a resistance higher than that of the first buried diffusion layer.
REFERENCES:
patent: 5633180 (1997-05-01), Bajor
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 7115475 (2006-10-01), Yamaguchi et al.
patent: 7161208 (2007-01-01), Spring et al.
patent: 7294885 (2007-11-01), Tihanyi et al.
patent: 7332770 (2008-02-01), Kobayashi
patent: 2003/0151087 (2003-08-01), Weber et al.
patent: 2004/0245570 (2004-12-01), Ninomiya
patent: 2005/0006717 (2005-01-01), Yamaguchi et al.
patent: 2006/0018634 (2006-01-01), Arad
patent: 2007/0114599 (2007-05-01), Hshieh
patent: 2001-313393 (2001-11-01), None
patent: 2003-273355 (2003-09-01), None
patent: 2006-93457 (2006-04-01), None
Akiyama Miwako
Kawaguchi Yusuke
Nakagawa Akio
Ono Syotaro
Yamaguchi Yoshihiro
Gebreyesus Yosef
Kabushiki Kaisha Toshiba
Nguyen Cuong Q
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4303558