Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2010-11-17
2011-10-18
Smith, Zandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C349S158000, C257SE29296
Reexamination Certificate
active
08039836
ABSTRACT:
In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such that the direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel to the direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.
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European Office Action dated Mar. 8, 2011 in corresponding European Patent Application No. 06783131.3.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Naraghi Ali
Smith Zandra
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