Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-07-14
2011-12-13
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29256
Reexamination Certificate
active
08076726
ABSTRACT:
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.
REFERENCES:
patent: 5591657 (1997-01-01), Fujishima et al.
patent: 5739061 (1998-04-01), Kitamura et al.
patent: 2002/0137292 (2002-09-01), Hossain et al.
patent: 2009/0273028 (2009-11-01), Mallikarjunaswamy et al.
patent: 07-307401 (1995-11-01), None
Cha Jae-Han
Chae Jin-Young
Choi Hyung-Suk
Kim Ju-Ho
Kim Sun-Goo
Blakely & Sokoloff, Taylor & Zafman
Magnachip Semiconductor Ltd.
Payen Marvin
Smith Bradley K
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