Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2008-12-03
2011-11-22
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000, C257S784000, C438S123000
Reexamination Certificate
active
08063476
ABSTRACT:
A semiconductor device includes a substrate having bumps on the backside thereof, a first semiconductor chip mounted on the surface of the substrate, a second semiconductor chip mounted on the first semiconductor chip above the surface of the substrate, a first bonding wire having a length L1for connecting the first semiconductor chip to the substrate, a second bonding wire having a length L2(where L2>L1) for connecting the second semiconductor chip to the substrate, a first resin seal having a dielectric constant ∈1for sealing the first bonding wire, and a second resin seal having a dielectric constant ∈2(where ∈2<∈1) for sealing the second bonding wire. The relationship between the lengths L1and L2and the dielectric constants ∈1and ∈2is defined by an equation of ∈1=∈2(L2/L1)2.
REFERENCES:
patent: 6445594 (2002-09-01), Nakagawa et al.
patent: 2005/0029642 (2005-02-01), Takaya et al.
patent: 2006/0138631 (2006-06-01), Tao et al.
patent: S61-237455 (1986-10-01), None
patent: 2004-259769 (2004-09-01), None
patent: 2005-167160 (2005-06-01), None
Isa Satoshi
Katagiri Mitsuaki
Koshiishi Kazutaka
Sasaki Dai
Doan Theresa T
Elpida Memory Inc.
McDermott Will & Emery LLP
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