Semiconductor device

Details Semiconductor device Semiconductor device

2009-03-30

2011-11-29

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

08067798

ABSTRACT:
The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film laminated on the semiconductor layer to cover a surface of the semiconductor layer; a contact hole penetrating through the insulating film in a layer thickness direction at least at a position facing the groove; a wiring formed on the insulating film; and a contact plug embedded in the contact hole so that a bottom portion thereof enters the groove to electrically connect the wiring and the source.

REFERENCES:
patent: 7075147 (2006-07-01), Cao
patent: 7629634 (2009-12-01), Hsieh
patent: 2006/0157779 (2006-07-01), Kachi et al.
patent: 2006-202931 (2006-08-01), None

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