Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-06-21
2011-10-25
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S778000, C257S779000, C257SE23004, C257SE23015, C438S612000
Reexamination Certificate
active
08044523
ABSTRACT:
The invention relates to a semiconductor device with a semiconductor chip, on which a terminal contact formed in one piece, a patterned metallization layer, contacting the terminal contact, and a connecting layer are successively arranged, the patterned metallization layer and the patterned connecting layer forming an electrically conducting contact layer.
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Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Lin John
Warren Matthew E
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