Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds

Reexamination Certificate

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Details

C257S778000, C257S779000, C257SE23004, C257SE23015, C438S612000

Reexamination Certificate

active

08044523

ABSTRACT:
The invention relates to a semiconductor device with a semiconductor chip, on which a terminal contact formed in one piece, a patterned metallization layer, contacting the terminal contact, and a connecting layer are successively arranged, the patterned metallization layer and the patterned connecting layer forming an electrically conducting contact layer.

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Andrew Sawle et al., “Direct FET™ A Proprietary New Source Mounted Power Package for Board Mounted Power”, Jun. 2004 (6 pgs.).
Fairchild Semiconductor “FDZ5045N—30V N-Channel Logic Level PowerTrench BGA-MOSFET”, Dec. 1999 (4 pages).
International Rectifier, DirectFET Power MOSFET, PD-94366A, Jan. 21, 2002 (9 pgs.).

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