Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE25031

Reexamination Certificate

active

08044468

ABSTRACT:
The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.

REFERENCES:
patent: 4924236 (1990-05-01), Schuss et al.
patent: 6023178 (2000-02-01), Shioya et al.
patent: 2002/0093094 (2002-07-01), Takagawa et al.
patent: 2003/0098468 (2003-05-01), Wheeler et al.
patent: 10-285918 (1998-10-01), None
patent: 2001-25239 (2001-01-01), None
patent: 2002-217416 (2002-08-01), None

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