Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-28

2011-10-11

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29260

Reexamination Certificate

active

08035158

ABSTRACT:
Aiming at realizing high breakdown voltage and low ON resistance of a semiconductor device having the super-junction structure, the semiconductor device of the present invention has a semiconductor substrate having an element forming region having a gate electrode formed therein, and a periphery region formed around the element forming region, and having an field oxide film formed therein; and a parallel p-n layer having n-type drift regions and p-type column regions alternately arranged therein, formed along the main surface of the semiconductor substrate, as being distributed over the element forming region and a part of the periphery region, wherein the periphery region has no column region formed beneath the end portion on the element forming region side of the field oxide film and has p-type column regions as at least one column region formed under the field oxide film.

REFERENCES:
patent: 6621132 (2003-09-01), Onishi et al.
patent: 2004/0065921 (2004-04-01), Iwamoto et al.
patent: 2005/0181577 (2005-08-01), Hshieh
patent: 2004-022716 (2004-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4276773