Semiconductor device

Details Semiconductor device Semiconductor device

2009-03-11

2011-10-04

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27060, C257SE21193

Reexamination Certificate

active

08030713

ABSTRACT:
A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.

REFERENCES:
patent: 5519355 (1996-05-01), Nguyen
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 2007/0221956 (2007-09-01), Inaba

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