Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257S337000, C257S481000

Reexamination Certificate

active

08044520

ABSTRACT:
A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.

REFERENCES:
patent: 2003/0016505 (2003-01-01), Jauregui
patent: 2004/0227547 (2004-11-01), Shiraishi et al.
patent: 2005/0156204 (2005-07-01), Uno et al.
patent: 2005/0161785 (2005-07-01), Kawashima et al.
patent: 2005/0218489 (2005-10-01), Satou et al.
patent: 2005/0231990 (2005-10-01), Uno et al.
patent: 2006/0132231 (2006-06-01), Ishii et al.
patent: 2007/0131938 (2007-06-01), Williams
patent: 2007/0278516 (2007-12-01), Hashimoto et al.
patent: 2008/0186004 (2008-08-01), Williams
patent: 2003-528449 (2003-09-01), None
patent: 2004-342735 (2004-12-01), None
patent: 2005-203584 (2005-07-01), None
patent: 2005-217072 (2005-08-01), None
patent: 2005-294464 (2005-10-01), None
patent: 2005-310907 (2005-11-01), None
patent: WO 01/72092 (2001-09-01), None

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