Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Reexamination Certificate
2008-05-23
2011-12-13
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
C257S491000, C257SE23011, C257SE23019
Reexamination Certificate
active
08076748
ABSTRACT:
A semiconductor device is provided having a high performance resistance element. In an N-type well isolated by an insulating film, two higher concentration N-type regions are formed. An interlayer insulating film is also formed. In a plurality of openings in the interlayer insulating film, one electrode group having a plurality of electrodes is formed on one N-type region, while a second electrode group having a plurality of electrodes is formed on the other N-type region. The relationship between the two N-type regions is between an island region and an annular region surrounding the island. The annular region of the N-type well between the island region and the annular region serves as a resistor R. Thus, discharge channels for charges applied excessively because of ESD or the like evenly exist in the periphery (four regions) of the one N-type region.
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Communication from Japanese Patent Office re: related application.
Okawa Kazuhiko
Saiki Takayuki
Harness & Dickey & Pierce P.L.C.
Pert Evan
Seiko Epson Corporation
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