Semiconductor device

Details Semiconductor device Semiconductor device

2008-01-02

2011-10-11

Pert, Evan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S382000, C257S774000, C257SE29111, C257SE29112, C257SE29116

Reexamination Certificate

active

08035229

ABSTRACT:
A semiconductor device includes: a gate electrode formed above a semiconductor region; a drain region and a source region formed in portions of the semiconductor region located below sides of the gate electrode in a gate length direction, respectively; a plurality of drain contacts formed on the drain region to be spaced apart in a gate width direction of the gate electrode; and a plurality of source contacts formed on the source region to be spaced apart in the gate width direction of the gate electrode. The intervals between the drain contacts are greater than the intervals between the source contacts.

REFERENCES:
patent: 6750517 (2004-06-01), Ker et al.
patent: 7405443 (2008-07-01), Zuniga et al.
patent: 2005/0093073 (2005-05-01), Baird et al.
patent: 2008/0265330 (2008-10-01), Gerhardt et al.
patent: 02-271673 (1990-11-01), None

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