Semiconductor device

Details Semiconductor device Semiconductor device

2002-11-28

2010-06-08

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S280000, C257SE29242

Reexamination Certificate

active

07732868

ABSTRACT:
A protecting element, comprising a first n+-type region, an insulating region, and a second n+-type region, is connected in parallel between two terminals of an FET. Since discharge across the first and second n+ regions is enabled, electrostatic energy that reaches the operating region of the FET can be attenuated without increasing the parasitic capacitance.

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