Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2010-03-19
2010-11-02
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S778000, C257SE23069, C257SE23174
Reexamination Certificate
active
07825410
ABSTRACT:
A semiconductor device, includes a package substrate having a first surface and a second surface opposite to the first surface, and a semiconductor element installed in the first surface of the package substrate. The package substrate includes a plurality of first land pads disposed in the first surface, second land pads disposed in the second surface and a second testing-dedicated pad disposed in the second surface. The semiconductor element is electrically coupled to the first land pads, an inter-pad distance for the second land pads is larger than an inter-pad distance for the first land pads, the first land pad contains a first testing-dedicated pad electrically coupled to the semiconductor element, the first testing-dedicated pad and the second testing-dedicated pad each include a dedicated terminal, which is essential for applying a specified electrical signal from an LSI tester, when an LSI testing is conducted for a semiconductor wafer and the first testing-dedicated pad is electrically coupled to only the second testing-dedicated pad through a wiring.
McGinn IP Law Group PLLC
NEC Electronics Corporation
Tran Minh-Loan T
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