Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-24

2010-10-05

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S204000, C257S411000, C257SE27108

Reexamination Certificate

active

07807990

ABSTRACT:
A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first insulating layer, and containing hafnium, silicon, oxygen, and nitrogen, and a first gate electrode formed on the second insulating layer. The first and second insulating layers have a first and second region respectively. The first and second regions are in a 0.3 nm range in the film thickness direction from an interface between the first insulating layer and the second insulating layer. Each of the first and second regions include aluminum atoms with a concentration of 1×1020cm−3or more to 1×1022cm−3or less.

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Hong-Jyh Li, et al., “Dual High-κ Gate Dielectric With Poly Gate Electrode: HfSiON on nMOS and Al2O3Capping Layer on pMOS”, IEEE Electron Device Letters, vol. 26, No. 7, Jul. 2005, pp. 441-444.
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