Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-28
2010-11-23
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185230, C365S185250
Reexamination Certificate
active
07839688
ABSTRACT:
A flash memory device which comprises a memory cell array having memory cells arranged in rows and columns; a word line voltage generator circuit configured to generate a program voltage, a dielectric breakdown prevention voltage, and a pass voltage at a program operation; and a row selector circuit that receives the program voltage, the dielectric breakdown prevention voltage, and the pass voltage and selecting one of the rows in response to a row address. The dielectric breakdown prevention voltage is lower than the program voltage and higher than the pass voltage; and the row selector circuit drives the selected row with the program voltage, drives at least one row just adjacent to, or neighboring, the selected row with the dielectric breakdown prevention voltage and drives remaining rows with the pass voltage.
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Graham Kretelia
Ho Hoai V
Muir Patent Consulting, PLLC
Samsung Electronics Co,. Ltd.
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