Semiconductor device

Details Semiconductor device Semiconductor device

1995-07-27

1997-10-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257526, 257513, 257517, 257577, H01L 2707, H01L 29735, H01L 2994, H01L 2996

Patent

active

056799721

ABSTRACT:
A semiconductor BiCMOS device and method of manufacturing suitable for attaining high packing density and thereby speeding up a switching operation, wherein the device is formed to have one of a source region or a drain region of an MOS transistor be immediately adjacent a base region of a bipolar transistor so as to be electrically connected. In this manner, an electrical terminal is eliminated, thereby permitting a higher packing density.

REFERENCES:
patent: 4243997 (1981-01-01), Natori et al.
patent: 4825274 (1989-04-01), Higuchi et al.
patent: 4918026 (1990-04-01), Kosiak et al.
patent: 5101257 (1992-03-01), Hayden et al.
patent: 5247200 (1993-09-01), Momose et al.
patent: 5471419 (1995-11-01), Sankaranarayanan et al.

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