Semiconductor device

Details Semiconductor device Semiconductor device

2006-12-26

2010-06-01

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S328000, C257S333000, C257S396000, C257SE21384, C257SE21410, C257SE21419, C257SE29321, C438S258000, C438S259000, C438S261000, C438S270000, C438S271000

Reexamination Certificate

active

07728380

ABSTRACT:
Embodiments relate to a semiconductor device. In embodiments, a semiconductor device may include a semiconductor substrate having isolation layers and a well region, a gate electrode formed within a trench having a predetermined depth in the well region, source/drain regions formed at both sides of the trench, respectively, an interlayer dielectric layer formed on the semiconductor substrate to have predetermined contact holes, and metal interconnections formed within the contact holes, respectively.

REFERENCES:
patent: 5473176 (1995-12-01), Kakumoto
patent: 6642130 (2003-11-01), Park
patent: 6916745 (2005-07-01), Herrick et al.
patent: 7259411 (2007-08-01), Hopper et al.
patent: 7368778 (2008-05-01), Lee et al.
patent: 2004/0224476 (2004-11-01), Yamada et al.

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