Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-12-03
2010-11-23
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C438S285000, C438S483000, C257SE29100, C257SE29117
Reexamination Certificate
active
07838348
ABSTRACT:
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.
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Herman Gregory S.
Hoffman Randy L.
Mardilovich Peter P.
Hewlett--Packard Development Company, L.P.
Monbleau Davienne
Nguyen Dilinh P
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