Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-21

2010-10-12

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255, C257S310000, C257S410000

Reexamination Certificate

active

07812412

ABSTRACT:
According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film2formed on a semiconductor layer1and a gate electrode5formed on the gate insulating film2. The gate insulating film2has a silicon oxide film including a metal element4and nitrogen3, and characteristics of the silicon oxide film are modified by adding the metal element4and nitrogen3. Respective concentration distributions of the metal element4and nitrogen3in the gate insulating film2have maximum values on an interface side between the gate insulating film2and the gate electrode5, and gradually decrease toward the semiconductor layer1.

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Form PCT/ISA/237.
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