Semiconductor device

Details Semiconductor device Semiconductor device

2009-03-24

2010-12-14

Shingleton, Michael B (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S390000, C257S401000, C257S405000

Reexamination Certificate

active

07851833

ABSTRACT:
A semiconductor device includes a first transistor unit including first field effect transistors with first gate electrodes electrically connected together, first sources electrically connected together, and first drains electrically connected together, the first gate electrodes being electrically connected to the first drains, a second transistor unit including second field effect transistors with second gate electrodes electrically connected together, second sources electrically connected together, and second drains electrically connected together, the second gate electrodes being electrically connected to the first gate electrodes, and dummy gate electrodes electrically isolated from the first gate electrodes and the second gate electrodes. The first gate electrodes, the second gate electrodes, and the dummy gate electrodes are arranged parallel to one another, and at least one dummy gate electrode is located between any one of the first gate electrodes and any one of the second gate electrodes.

REFERENCES:
patent: 7508268 (2009-03-01), Sasaki et al.
patent: 2005/0121790 (2005-06-01), Cleeves et al.
patent: 2008/0061871 (2008-03-01), Abe et al.
patent: 2008/0258815 (2008-10-01), Abe et al.
patent: 2009/0134430 (2009-05-01), Abe et al.
patent: 2005-86120 (2005-03-01), None
patent: 2007-60616 (2007-03-01), None

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