Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-17

2010-10-19

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S139000, C257S288000, C257S331000, C257S341000

Reexamination Certificate

active

07816741

ABSTRACT:
The semiconductor device of the present invention has a body layer of a P-type impurity region formed on an N−layer of an N-type impurity region. A plurality of trenches is formed through the body layer from the main surface thereof. A gate insulating film and a gate electrode are formed in each trench. A contact layer of a P-type impurity region and an emitter layer of an N-type impurity region are formed on the main surface of the body layer. A plurality of floating ring layers of P-type impurity regions is formed on the main surface of the N−layer, being spaced apart from the body layer. A well layer of an N-type impurity region is formed between the body layer and N−layer in an area contained in the body layer in plane view.

REFERENCES:
patent: 2007/0114570 (2007-05-01), Yamaguchi et al.
patent: 08-316479 (1996-11-01), None

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