Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C438S411000

Reexamination Certificate

active

07732891

ABSTRACT:
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.

REFERENCES:
patent: 4881105 (1989-11-01), Davari et al.
patent: 5336917 (1994-08-01), Kohyama
patent: 5599724 (1997-02-01), Yoshida
patent: 6870215 (2005-03-01), Endoh et al.
patent: 2007/0252201 (2007-11-01), Kito et al.
U.S. Appl. No. 11/962,862, filed Dec. 21, 2007, Hiroyasu Tanaka et al.
U.S. Appl. No. 12/018,486, filed Jan. 23, 2008, Hiroyasu Tanaka et al.
U.S. Appl. No. 12/392,636, filed Feb. 25, 2009, Ishiduki et al.
U.S. Appl. No. 12/501,142, filed Jul. 10, 2009, Fukuzumi et al.
U.S. Appl. No. 12/325,023, filed Nov. 28, 2008, Fukuzumi et al.

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