Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2010-11-09
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S565000, C257SE29027, C257SE29066, C257SE29197, C257SE21382
Reexamination Certificate
active
07829955
ABSTRACT:
A horizontal semiconductor device having multiple unit semiconductor elements, each of said unit semiconductor element formed by an IGBT including: a semiconductor substrate of a first conductivity type; a semiconductor region of a second conductivity type formed on the semiconductor substrate; a collector layer of the first conductivity type formed within the semiconductor region; a ring-shaped base layer of the first conductivity type formed within the semiconductor region such that the base layer is off said collector layer but surrounds said collector layer; and a ring-shaped first emitter layer of the second conductivity type formed in said base layer, wherein movement of carriers between the first emitter layer and the collector layer is controlled in a channel region formed in the base layer, and the unit semiconductor elements are disposed adjacent to each other.
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U.S. Appl. No. 11/461,598, filed Aug. 1, 2006, Hatade.
Bryant Kiesha R
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Wright Tucker
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