Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S013000, C257S698000, C257S079000

Reexamination Certificate

active

07667249

ABSTRACT:
A semiconductor device includes: a semiconductor element provided on a semiconductor layer; a light-blocking wall provided around the semiconductor element; and a wiring layer electrically coupled to the semiconductor element and extended from an aperture not having the light-blocking wall to an outside of the light-blocking wall; wherein the wiring layer has a pattern containing a first section positioned in the aperture and a second section which has a width not narrower than a width of the aperture by providing a branched portion intersecting with an extension direction of the wiring layer; and wherein a surface of the branched portion facing outside of the light-blocking wall includes thereon a convex part.

REFERENCES:
patent: 5012309 (1991-04-01), Nakayama
patent: 5031011 (1991-07-01), Aritome et al.
patent: 5563445 (1996-10-01), Iijima et al.
patent: 5923084 (1999-07-01), Inoue et al.
patent: 6078070 (2000-06-01), Robinson
patent: 6235547 (2001-05-01), Sakuma et al.
patent: 6507095 (2003-01-01), Hashimoto
patent: 7280278 (2007-10-01), Boettiger et al.
patent: 2005/0211993 (2005-09-01), Sano et al.
patent: 63-308388 (1988-12-01), None
patent: 63-310180 (1988-12-01), None
patent: 2003-124363 (2003-04-01), None

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