Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-24
2010-02-23
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S013000, C257S698000, C257S079000
Reexamination Certificate
active
07667249
ABSTRACT:
A semiconductor device includes: a semiconductor element provided on a semiconductor layer; a light-blocking wall provided around the semiconductor element; and a wiring layer electrically coupled to the semiconductor element and extended from an aperture not having the light-blocking wall to an outside of the light-blocking wall; wherein the wiring layer has a pattern containing a first section positioned in the aperture and a second section which has a width not narrower than a width of the aperture by providing a branched portion intersecting with an extension direction of the wiring layer; and wherein a surface of the branched portion facing outside of the light-blocking wall includes thereon a convex part.
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Inoue Susumu
Maruo Yutaka
Takeda Yo
Harness & Dickey & Pierce P.L.C.
Luu Chuong A.
Seiko Epson Corporation
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