Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-14
2010-11-09
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S331000, C257S332000, C257SE21655, C257SE29201
Reexamination Certificate
active
07829946
ABSTRACT:
A semiconductor device including a MOSFET has a plurality of transistor cell regions disposed on a semiconductor substrate and a Schottky cell region disposed between the plurality of transistor cell regions. Each transistor cell region has a plurality of first trenches disposed in a main surface of the semiconductor substrate, a well region between the plurality of first trenches, a first gate insulating film and a first gate electrode of the MOSFET in each first trench, and a source region of the MOSFET in each well region. The Schottky cell region has a plurality of second trenches disposed in the main surface of the semiconductor substrate, a second gate insulating film and a second gate electrode of the MOSFET in each second trench, gate lead-out wiring connected to each second gate electrode, and a plurality of guard ring regions enclosing the respective second trenches.
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Matsuura Nobuyoshi
Nakazawa Yoshito
Shirai Nobuyuki
Huynh Andy
Miles & Stockbridge P.C.
Renesas Electronics Corporation
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