Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S330000, C257S331000, C257S332000, C257SE21655, C257SE29201

Reexamination Certificate

active

07829946

ABSTRACT:
A semiconductor device including a MOSFET has a plurality of transistor cell regions disposed on a semiconductor substrate and a Schottky cell region disposed between the plurality of transistor cell regions. Each transistor cell region has a plurality of first trenches disposed in a main surface of the semiconductor substrate, a well region between the plurality of first trenches, a first gate insulating film and a first gate electrode of the MOSFET in each first trench, and a source region of the MOSFET in each well region. The Schottky cell region has a plurality of second trenches disposed in the main surface of the semiconductor substrate, a second gate insulating film and a second gate electrode of the MOSFET in each second trench, gate lead-out wiring connected to each second gate electrode, and a plurality of guard ring regions enclosing the respective second trenches.

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patent: 6049108 (2000-04-01), Williams et al.
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patent: 6638850 (2003-10-01), Inagawa et al.
patent: 6781194 (2004-08-01), Baliga
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patent: 7-249770 (1995-09-01), None
patent: 10-150140 (1998-06-01), None
patent: 11-154748 (1999-06-01), None

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