Semiconductor device

Details Semiconductor device Semiconductor device

2007-07-27

2010-02-02

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000

Reexamination Certificate

active

07655974

ABSTRACT:
A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.

REFERENCES:
patent: 4819052 (1989-04-01), Hutter
patent: 6459142 (2002-10-01), Tihanyi
patent: 2004/0232522 (2004-11-01), Shimizu
patent: 2003-303960 (2003-10-01), None

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