Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Patent
1998-06-30
2000-04-25
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
257630, 257652, H01L 2934, H01L 2940
Patent
active
060547529
ABSTRACT:
A semiconductor device comprises a semiconductor substrate including a first conductivity type first semiconductor layer and a second conductivity type second semiconductor layer formed on the first semiconductor layer. A unit cell for controlling current flowing between a source electrode and a drain electrode is formed in the semiconductor substrate. A trench is formed in a peripheral region of the unit cell to form mesa structure. A field relaxing layer is formed between an insulating film on a side face of the second trench and both the first semiconductor layer and the second semiconductor layer in order to relax concentration of an electric field in the insulating film.
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Rottner, et al., "OBIC measurements on 6H SiC p+--n--mesa diodes with floating field rings", Inst. Phys. Conf., 1995, Ser. No. 142, Chapter 4, p. 721-724.
Hara Kazukuni
Kataoka Mitsuhiro
Kumar Rajesh
Takeuchi Yuichi
Yamamoto Tsuyoshi
Denso Corporation
Meier Stephen D.
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