Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2008-04-01
2010-06-22
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S700000, C257S758000, C257S773000, C257S775000, C257S784000
Reexamination Certificate
active
07741724
ABSTRACT:
This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
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Goto Yuji
Inaba Yuichi
Morikawa Shigehiro
Andújar Leonardo
Klein Jordan
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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