Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-12-07
2010-02-02
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S205000, C365S190000, C365S207000
Reexamination Certificate
active
07656721
ABSTRACT:
A semiconductor includes a first sensor amplifier, a second sensor amplifier, a first switch and a second switch. The first sensor amplifier is coupled between a local data line and a memory unit to amplify signals of the memory unit. The second sensor amplifier is coupled to a middle data line to amplify signals of the middle data line. The first switch is coupled between the middle data line and the local data line to equalize voltage levels between the middle data line and the local data line by turning on the first switch according to a data control signal. The second switch is coupled between the local data line and a reference voltage to equalize the local data line to the voltage level of the reference voltage by turning on the second switch according to a local data control signal.
REFERENCES:
patent: 6504777 (2003-01-01), Hsu et al.
patent: 7061817 (2006-06-01), Raad et al.
patent: 7266030 (2007-09-01), Do et al.
Liu Wei-Li
Wang Ming-Shiang
Lam David
Nanya Technology Corporation
Quintero Law Office
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