Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-31

2010-06-01

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

C257S471000, C257S472000, C257S473000, C257S486000, C257S454000, C257S155000, C257S284000

Reexamination Certificate

active

07728403

ABSTRACT:
A semiconductor device of unipolar type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7″) of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (7″) of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers (7) for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.

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