Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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Reexamination Certificate

active

07838914

ABSTRACT:
The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode17is formed in an active region defined by an element separation portion9on a main surface of a substrate1comprising GaAs. The gate electrode17is patterned so as to extend in the vertical direction of the page surface between source electrodes13and drain electrodes14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode17disposed outside the active region is reduced, and the area of a gate pad17A is reduced.

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