Semiconductor device

Details Semiconductor device Semiconductor device

2007-12-17

2010-11-30

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S598000, C257SE21585, C257SE21597

Reexamination Certificate

active

07842610

ABSTRACT:
A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.

REFERENCES:
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patent: 6093630 (2000-07-01), Geffken et al.
patent: 6104054 (2000-08-01), Corsi et al.
patent: 6657306 (2003-12-01), Sasaki et al.
patent: 2006/0006539 (2006-01-01), Matsui et al.
patent: 2006/0278995 (2006-12-01), Trezza
patent: 2002-289623 (2002-10-01), None
patent: 2003-17558 (2003-01-01), None
patent: 2003-151978 (2003-05-01), None
patent: 2004-356160 (2004-12-01), None
Japanese Patent Office issued a Japanese Office Action dated Apr. 28, 2010, Application No. 2005-077050.

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