Semiconductor device

Details Semiconductor device Semiconductor device

2008-02-22

2010-10-26

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With heat sink embedded in encapsulant

C257S706000, C257SE23101

Reexamination Certificate

active

07821141

ABSTRACT:
A semiconductor device including: a heat sink, a die on the heat sink, resin encapsulating the die, and a mounting aperture in the resin having at least a segment between the heat sink and a first end of the resin, wherein the thickness of the heat sink is no greater than 35% of the thickness of the device.

REFERENCES:
patent: 6903457 (2005-06-01), Nakajima et al.
patent: 2005/0001311 (2005-01-01), Ho et al.
Datasheet: TO-247AD Package Outline Drawing Spec—ver2, http://www.irf.com/package/outline/po—to247ad.pdf, 1 pg., International Rectifier, El Segundo, CA.
Datasheet: STGW30N90D N-channel 900V—30A—TO-247 Very fast PowerMESH™ IGBT, http://www.st.com/stonline/products/literature/ds/13766/stgw30n90d.pdf, 10 pgs., STMicroelectronics.
Datasheet: 2SB775/2SD895, series-NPN triple diffused planar silicon transistor, www.sanyo.com., 4 pgs., Sanyo Electric Corp., Ltd., Allendale, NJ.
Arnold, M., “The Revolution in Discrete Isolation Technique,” Technical Application, www.ixys.com, 5 pgs., IXYS Corporation, Santa Clara, CA.
STMicroelectronics, Surface mounting packages; Through hole packages, Order code: SGPMOSFET1006, www.st.com, Oct. 2006.

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