Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-09
2010-02-16
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S342000, C257S330000, C438S270000
Reexamination Certificate
active
07663186
ABSTRACT:
A semiconductor device includes: a substrate, a surface portion thereof serving as a drain layer; a first main electrode connected to the drain layer; an epitaxial layer formed on the drain layer; a base layer formed on the epitaxial layer; a source layer formed in a base layer surface portion; an insulated trench sandwiched by base layers; a JFET layer formed on trench side walls; an LDD layer formed in a base layer surface portion and connected to the JFET layer around a top face of the trench; a control electrode formed on a gate insulating film formed on an LDD layer surface part, on surfaces of source layer end parts facing each other across the trench, and on a base layer region sandwiched by the LDD and source layers; and a second main electrode connected to the source and base layers sandwiching the control electrode.
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Hodama Shinichi
Kawaguchi Yusuke
Matsushita Ken'ichi
Nakagawa Akio
Nakamura Kazutoshi
Doan Theresa T
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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