Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-29
2010-10-26
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S253000, C257S239000, C257SE29019, C257SE29020, C257S510000, C257S368000, C257S500000, C438S253000, C438S239000
Reexamination Certificate
active
07821077
ABSTRACT:
The active region of an NMOS transistor and the active region of a PMOS transistor are divided by an STI element isolation structure. The STI element isolation structure is made up of a first element isolation structure formed so as to include the interval between both active regions, and a second element isolation structure formed in the region other than the first element isolation structure.
REFERENCES:
patent: 6303432 (2001-10-01), Horita et al.
patent: 6306432 (2001-10-01), Shirley et al.
patent: 6974981 (2005-12-01), Chidambarrao et al.
patent: 2002/0070420 (2002-06-01), Oh et al.
patent: 2004/0080019 (2004-04-01), Oh et al.
patent: 2004/0113174 (2004-06-01), Chidambarrao et al.
patent: 2004/0248374 (2004-12-01), Belyansky et al.
patent: 2005/0121727 (2005-06-01), Ishitsuka et al.
patent: 2005/0179112 (2005-08-01), Belyansky et al.
patent: 2005/0194646 (2005-09-01), Inoue et al.
patent: 2005/0280051 (2005-12-01), Chidambarrao et al.
patent: 2006/0125043 (2006-06-01), Smythe et al.
patent: 1507032 (2004-06-01), None
patent: 11-54605 (1999-02-01), None
patent: 2003-158241 (2003-05-01), None
patent: 2003-273206 (2003-09-01), None
patent: 2004-363595 (2004-12-01), None
Patent Abstracts of Japan, Publication No. 2003203989 A, published on Jul. 18, 2003.
Office Action dated Aug. 11, 2006, issued in corresponding Korean Application No. 2005-54833.
Chinese Office Action dated Apr. 25, 2008, issued in corresponding application No. 200510084551.1.
Japanese Office Action dated Dec. 2, 2008 issued in corresponding Japanese Application No. 2005-104234.
Armand Marc
Fahmy Wael M
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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