Semiconductor device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S185180, C365S185190, C365S158000, C365S191000, C365S225500

Reexamination Certificate

active

07859896

ABSTRACT:
A semiconductor device for high-speed reading and which has a high data-retention characteristic is provided. In a semiconductor device including a memory array having a plurality of memory cells provided at intersecting points of a plurality of word lines and a plurality of bit lines, where each memory cell includes an information memory section and a select element, information is programmed by a first pulse (reset operation) for programming information flowing in the bit line, a second pulse (set operation) different from the first pulse, and information is read by a third pulse (read operation), such that the current directions of the second pulse and the third pulse are opposite to each other.

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2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 175-176.
ISSCC 2004/Session 2/Non-Volatile Memory/2.1.

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