Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2006-02-02
2010-12-28
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S185180, C365S185190, C365S158000, C365S191000, C365S225500
Reexamination Certificate
active
07859896
ABSTRACT:
A semiconductor device for high-speed reading and which has a high data-retention characteristic is provided. In a semiconductor device including a memory array having a plurality of memory cells provided at intersecting points of a plurality of word lines and a plurality of bit lines, where each memory cell includes an information memory section and a select element, information is programmed by a first pulse (reset operation) for programming information flowing in the bit line, a second pulse (set operation) different from the first pulse, and information is read by a third pulse (read operation), such that the current directions of the second pulse and the third pulse are opposite to each other.
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ISSCC 2004/Session 2/Non-Volatile Memory/2.1.
Fujisaki Yoshihisa
Kurotsuchi Kenzo
Takaura Norikatsu
Mattingly & Malur, P.C.
Nguyen Viet Q
Renesas Electronics Corporation
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