Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-09-18
2010-02-02
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S192000
Reexamination Certificate
active
07656010
ABSTRACT:
A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
REFERENCES:
patent: 5183684 (1993-02-01), Carpenter
patent: 6100571 (2000-08-01), Mizuta et al.
patent: 7304331 (2007-12-01), Saito et al.
patent: 7332795 (2008-02-01), Smith et al.
patent: 7419892 (2008-09-01), Sheppard et al.
patent: 2002-198563 (2002-07-01), None
patent: 2006-32552 (2006-02-01), None
patent: 2006-156429 (2006-06-01), None
Vertiachikh, A.V., et al., “Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor”, Electronics Letters, Apr. 2002, pp. 388-389, vol. 38 No. 8.
Ishida Hidetoshi
Murata Tomohiro
Tanaka Tsuyoshi
Ueda Daisuke
Ueda Tetsuzo
McDermott Will & Emery LLP
Panasonic Corporation
Prenty Mark
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