Semiconductor device

Details Semiconductor device Semiconductor device

2000-03-06

2000-12-05

Mai, Son

Static information storage and retrieval

Systems using particular element

Flip-flop

365 63, 257369, 257903, 438153, 438154, G11C 1100, H01L 2711

Patent

active

06157564&

ABSTRACT:
An SRAM is provided in which adjacent contact holes cannot be connected and which can be miniaturized. An SRAM memory cell includes a gate electrode formed on a silicon substrate, and an interlayer insulation film covering the gate electrode. The interlayer insulation film has a contact hole which reaches an active region and a contact hole which reaches the gate electrode. The contact holes are positioned almost in a lattice manner.

REFERENCES:
patent: 5619056 (1997-04-01), Kuriyama et al.
patent: 5841153 (1998-11-01), Kuriyama et al.
patent: 5955746 (1999-09-01), Kim
patent: 5973369 (1999-10-01), Hayashi
"A Novel 6T-SRAM Cell Technology Designed with Rectangular Patterns Scalable beyond 0.18 .mu.m Generation and Desirable for Ultra High Speed Operation", M. Ishida et al., IEDM98, 1998, pp. 201-204.

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