Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2008-01-11
2010-12-14
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257SE23023
Reexamination Certificate
active
07851929
ABSTRACT:
A semiconductor device having a wafer level chip size package may include a semiconductor substrate having an integrated circuit formed thereon; a plurality of electrode pads formed on the semiconductor substrate; at least one rewiring layer which may include rewiring formed adjacent to the plurality of electrode pads; and a plurality of external electrodes formed on the rewiring layer. The plurality of electrodes and plurality of external electrodes may be sectioned and arranged in four areas having the same shapes. Each area may include a first group of N number of external electrodes arranged along an edge of the semiconductor substrate, a second group of (N−2) number of external electrodes arranged inside the first group of external electrodes, and a plurality of (2N−2) number of electrode pads arranged between the first and second groups of external electrodes.
REFERENCES:
patent: 7342312 (2008-03-01), Komiya
patent: 2001/0050423 (2001-12-01), Kariyazaki
patent: 2006/0163728 (2006-07-01), Nakanishi et al.
patent: 2006/0180942 (2006-08-01), Kuroda et al.
patent: 2006/0180943 (2006-08-01), Miwa et al.
patent: 2006/0214189 (2006-09-01), Chen
patent: 2003-297961 (2003-10-01), None
Cantor & Colburn LLP
Ha Nathan W
Rohm & Co., Ltd.
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