Semiconductor device

Details Semiconductor device Semiconductor device

2008-02-13

2010-02-23

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S501000, C257SE27009, C257SE29255

Reexamination Certificate

active

07667280

ABSTRACT:
Provided is a semiconductor device having a trench isolation structure and a high power supply voltage circuit section including at least a well region and a MOS transistor formed therein. The high power supply voltage circuit section includes a carrier capture region for preventing latch-up in a vicinity of an end portion of the well region, and a depth of the carrier capture region is larger than a depth of the trench isolation region. The carrier capture region in the high power supply voltage circuit section is formed of a diffusion layer which is the same as that of a source or a drain region of the MOS transistor formed in the high power supply voltage circuit section.

REFERENCES:
patent: 2005/0088556 (2005-04-01), Han
patent: 2008/0150055 (2008-06-01), Kim
patent: 2000-58673 (2000-02-01), None

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