Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-18
2010-02-16
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S077000, C257S332000, C257S368000, C257S401000
Reexamination Certificate
active
07663181
ABSTRACT:
A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.
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patent: 2003/0178672 (2003-09-01), Hatakeyama et al.
patent: 9-508492 (1997-08-01), None
patent: WO 95/18465 (1995-07-01), None
A.B. Horsfall et al., “Optimisation of a 4H-SiC Enhancement Mode Power JFET”, Materials Science Forum vols. 433-436 (2003) pp. 777-780.
Kiyoshi Tone et al., “4H-SiC Normally-Off Vertical Junction Field-Effect Transistor With High Current Density”, IEEE Electron Device Letters, vol. 24, No. 7, Jul. 2003.
Office Action dated Jun. 22, 2007; 7 pages.
Translation of an Office Action dated Jun. 22, 2007; 5 pages.
Nakamura Hiroki
Ohyanagi Takasumi
Sakakibara Toshio
Watanabe Atsuo
Yamamoto Tsuyoshi
Antonelli, Terry Stout & Kraus, LLP.
Denso Corporation
Hitachi , Ltd.
Wojciechowicz Edward
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