Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-10
2010-11-23
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29005, C257SE29066
Reexamination Certificate
active
07838926
ABSTRACT:
A semiconductor device includes a semiconductor substrate; a first base region of a first conductivity type provided in the semiconductor substrate; a buffer region of the first conductivity type provided on a lower surface of the first base region and having an impurity concentration higher than an impurity concentration of the first base region; an emitter region of a second conductivity type provided on a lower surface of the buffer region; a second base region of the second conductivity type selectively provided on an upper surface of the first base region; a diffusion region of the first conductivity type selectively provided on an upper surface of the second base region; a control electrode; a first main electrode; and a second main electrode. A junction interface between the buffer region and the first base region has a concave portion and a convex portion.
REFERENCES:
patent: 6037632 (2000-03-01), Omura et al.
patent: 7132321 (2006-11-01), Kub et al.
patent: 6-61495 (1994-03-01), None
patent: 2002-43573 (2002-02-01), None
patent: 2004-103982 (2004-04-01), None
Masanori Tsukuda, et al., “Critical IGBT Design Regarding EMI and Switching Losses”, Proceedings of the 20thInternational Symposium on Power Semiconductor Devices & IC's, May , 2008, pp. 185-188.
H.P. Felsl, et al., “The CIBH Diode—Great Improvement for Ruggedness and Softness of High Voltage Diodes”, Proceedings of the 20thInternational Symposium on Power Semiconductor Devices & IC's, May, 2008, pp. 173-176.
Omura Ichiro
Tsukuda Masanori
Kabushiki Kaisha Toshiba
Lopez Fei Fei Yeung
Mandala Victor A
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4161622