Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-25
2010-12-28
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S339000, C438S270000, C438S276000
Reexamination Certificate
active
07859049
ABSTRACT:
Provided is a semiconductor device. A well region (2) formed on a semiconductor substrate (1) includes a plurality of trench regions (12), and a source electrode (10) is connected to a source region (6) formed on a substrate surface between the trench regions (12). Adjacently to the source region (6), a high concentration region (11) is formed, which is brought into butting contact with the source electrode (10) together with the source region (6), whereby a substrate potential is fixed. A drain region (5) is formed at a bottom portion of the trench region (12), whose potential is taken to the substrate surface by a drain electrode (9) buried inside the trench region (12). An arbitrary voltage is applied to a gate electrode (4a,4b), and the drain electrode (9), whereby carriers flow from the source region (6) to the drain region (5) and the semiconductor device is in an on-state.
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European Search Report for counterpart European Application No. 09153700.1, dated Sep. 15, 2009, 11 pages.
Fujishima, Naoto et al., “A trench lateral power MOSFET using self-aligned trench bottom contact holes”, Department of Electrical and Computer Engineering, University of Toronto, Canada, Electron Devices Meeting, 1997, 4 pages.
Brinks Hofer Gilson & Lione
Dang Phuc T
Seiko Instruments Inc.
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